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Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers |
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| Authors: | Josep Altet José Luis González Dídac Gomez Xavier Perpiñà Wilfrid Claeys Stephane Grauby Cedric Dufis Miquel Vellvehi Diego Mateo Ferran Reverter Stefan Dilhaire Xavier Jordà |
| Institution: | 1. Electronic Engineering Department, Universitat Politècnica de Catalunya, Spain;2. IMB-CNM (CSIC), Bellaterra – Spain;3. CEA-Leti, Minatec Campus, Grenoble, France;4. Laboratoire Ondes et Matière d?Aquitaine, Université Bordeaux I, France |
| Abstract: | This paper reports on the design solutions and the different measurements we have done in order to characterize the thermal coupling and the performance of differential temperature sensors embedded in an integrated circuit implemented in a 65 nm CMOS technology. The on-chip temperature increases have been generated using diode-connected MOS transistors behaving as heat sources. Temperature measurements performed with the embedded sensor are corroborated with an infra-red camera and a laser interferometer used as thermometer. A 2 GHz linear power amplifier (PA) is as well embedded in the same silicon die. In this paper we show that temperature measurements performed with the embedded temperature sensor can be used to monitor the PA DC behavior and RF activity. |
| Keywords: | CMOS integrated circuits CMOS differential temperature sensors Electro-thermal characterization Thermal coupling characterization IR camera measurements Laser interferometer measurements |
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