| SOI全内反射型光波导电光开关模型研究 |
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| 引用本文： | 赵策洲,李国正.SOI全内反射型光波导电光开关模型研究[J].光学学报,1995,15(12):702-1706. |
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| 作者姓名： | 赵策洲 李国正 |
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| 作者单位： | 西安交通大学电子工程系，西安电子科技大学微电子所，中国科学院半导体研究所博士后流动站 |
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| 摘 要： | 根据受抑全反射的光学隧道效应和Ｇｏｏｓ－Ｈａｎｃｈｅｎ位移分析ＳＯＩ全内反射型光波导开关中导模的传输和反射特性。在讨论等离子体色散效应，ｐ－ｎ结大注入效应的基础上，分析了全内反射光波导开关的电学性质。设计了该器件的结构以数和电学参数。
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| 关 键 词： | 全内反射 SOI 光波导 电光开关 |
| 收稿时间： | 1994/10/2 |
Modeling Study of SOI Optical Waveguide Switch Based on Total Internal Reflection |
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| Zhao Cezhou, Li Guozheng, Liu Yuliang, Liu Enke, Liu Xiding.Modeling Study of SOI Optical Waveguide Switch Based on Total Internal Reflection[J].Acta Optica Sinica,1995,15(12):702-1706. |
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| Authors: | Zhao Cezhou Li Guozheng Liu Yuliang Liu Enke Liu Xiding |
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| Abstract: | The reflection phenomenon of the guided mode in SOI (Silicon On Insulator) total internal reflection optical waveguide switch is investigated based on optical tunneling effect due to frustrated total reflection and Goos-Hanchen displacement. The p-n junction large injection effect and plasma dispersion effect are discussed, and the electric characteristic of the SOI total internal reflection switch is studied. So, the structural and electric parameters of the switch can be designed. |
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| Keywords: | total internal reflection SOI mode |
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