| GaAs/GaAlAs异质NIPI超晶格的光荧光谱 |
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| 引用本文： | 汤寅生 汪德生. GaAs/GaAlAs异质NIPI超晶格的光荧光谱[J]. 发光学报, 1991, 12(4): 354-357 |
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| 作者姓名： | 汤寅生 汪德生 |
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| 作者单位： | 1. 中国科技大学结构分析中心和基础物理中心;2. 中国科学院半导体研究所和国家超晶格及有关微结构实验室;3. Maxplanck Institute for Solid State Research, Germany |
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| 摘 要： | 异质NIPI超晶格结构的基本单元是由n型和p型的宽禁带材料薄层及插在它们中间的不掺杂窄禁带材料层组成,如nGaAlAs-不掺杂GaAs-pGaAlAs-不掺杂GaAs四层结构,其中Ⅰ代表不掺杂层.它是组分超晶格和掺杂超晶格结合,因而具有许多新的性质,例如空间电荷分离,载流子局域在未掺杂区内等.这个结构最早是由德国的Dõhler等所研究.
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| 关 键 词： | GaAs GaAlAs 超晶格 荧光光谱 |
PL SPECTRA OF GaAs/GaAlAs HETERO-NIPI SUPERLATTICE STRUCTURE |
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| Tang Yinsheng,Jiang Desheng,Zhuang Weihua,K. Ploog. PL SPECTRA OF GaAs/GaAlAs HETERO-NIPI SUPERLATTICE STRUCTURE[J]. Chinese Journal of Luminescence, 1991, 12(4): 354-357 |
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| Authors: | Tang Yinsheng Jiang Desheng Zhuang Weihua K. Ploog |
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| Affiliation: | 1. Structure Analysis and Basic Physics Center, University of Science and Technology of China, Hefei 230026;2. Semiconductor Institute, Academia Sinica and National Superlattice and Microstructure Laboratory, Beijing 100083;3. Maxplanck Institute for Solid State Research, Germany |
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| Abstract: | The study on photoluminescence spectra of GaAs/GaAlAs hetero-NIPI structure is described in this paper. The influence of emission intensity on the transitions among various energy levels is reported. Dependence of emission peaks on the emission intensity is explained by the competition between the neutralization of impurities caused by the injection of photocarriers and the migration of carriers from doped layer to triangular barriers. |
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