| BaF2晶体的取向和入射束的剂量对溅射的影响 |
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| 引用本文： | 陶振兰,王震遐,朱福英,章骥平,潘冀生,周祖尧,沈定中,袁湘龙,华素坤. BaF2晶体的取向和入射束的剂量对溅射的影响[J]. 物理学报, 1994, 43(10): 1734-1738 |
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| 作者姓名： | 陶振兰 王震遐 朱福英 章骥平 潘冀生 周祖尧 沈定中 袁湘龙 华素坤 |
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| 作者单位： | (1)中国科学院上海硅酸盐研究所; (2)中国科学院上海冶金研究所; (3)中国科学院上海原子核研究所 |
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| 基金项目： | 国家自然科学基金资助的课题. |
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| 摘 要： | ２７ｋｅＶ Ａｒ＋离子束沿法向分别入射在ＢａＦ2单晶（１１１），（１００）和（１１０）的晶面上，用捕获器方法和Ｒｕｔｈｅｒｆｏｒｄ背散射分析法测定了Ｂａ原子的溅射角分布和溅射产额。结果发现不同取向的晶体表面，它们的溅射产额有明显差异。当用剂量为５×１０17ｉｏｎ／ｃｍ2的Ａｒ＋离子分别轰击这三种晶面时，其溅射产额的顺序Ｙ１００＞ｙ１１１＞ｙ１１０．对已被上述剂量辐照过的晶面再作相同剂量轰击时，测得的溅射产额明显增大。这些结果被认为是由于在离子辐照过程中表面晶格受损逐步增大所致。关键词：
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| 关 键 词： | 氟化钡晶体 取向 剂量 溅射 |
| 收稿时间： | 1993-07-12 |
EFFECT OF CRYSTAL ORIENTATION AND INCIDENT ION FLUENCE ON SPUTTERING FROM ION-IRRADIATED BaF2 |
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| TAO ZHEN-LAN,WANG ZHEN-XIA,ZHU FU-YING,ZHANG JI-PING,PAN JI-SHENG,ZHOU ZU-YAO,SHEN DING-ZHONG,YUAN XIANG-LONG and HUA SU-KUN. EFFECT OF CRYSTAL ORIENTATION AND INCIDENT ION FLUENCE ON SPUTTERING FROM ION-IRRADIATED BaF2[J]. Acta Physica Sinica, 1994, 43(10): 1734-1738 |
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| Authors: | TAO ZHEN-LAN WANG ZHEN-XIA ZHU FU-YING ZHANG JI-PING PAN JI-SHENG ZHOU ZU-YAO SHEN DING-ZHONG YUAN XIANG-LONG HUA SU-KUN |
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| Abstract: | BaF2 Crystal was irradiated with 27keV Ar＋ ions along the normal of (111), (100) and (110) planes at a current density of １０17μA／ｃｍ2. Using collector technique and RBS analysis, the angular distribution and yield of Ba atoms sputtered from BaF2 crystal have been measured as a fuction of orientation and ion fluence. The obtained angular distributions of Ba atoms sputtered are over-cosine type for all specimens. The sputtering yields were strongly dependent on the fluence of the incident beam on the targets |
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