Pulse characteristics of Hg0.8Cd0.2Te n +-p junctions

The pulse characteristics of Hg_0.8Cd_0.2Te n ⁺-p junctions are investigated. It is shown that the shape of the voltage pulse appearing in a junction on passage of a forward (reverse) current is determined by the recombination (generation) of nonequilibrium electrons in the hole region. An increase in the current pulse causes the appearance of an electric field, which draws electrons into the interior of the base region, and leads to variation of their lifetime because of the complex structure of the n ⁺-p junction. Zh. Tekh. Fiz. 67, 130–133 (July 1997