Scalable silicon nanowire photodetectors |
| |
Authors: | P Servati A Colli S Hofmann YQ Fu P Beecher ZAK Durrani AC Ferrari AJ Flewitt J Robertson WI Milne |
| |
Institution: | aElectrical Engineering Division, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK |
| |
Abstract: | This paper presents photodetectors having vertically stacked electrodes with sub-micron ( 300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density. |
| |
Keywords: | Nanowires Nanocomposites Photodetectors Schottky diodes |
本文献已被 ScienceDirect 等数据库收录! |