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Dynamics of terraces on a silicon surface due to the combined action of strain and electric current
Authors:Wei Hong  Zhenyu Zhang
Affiliation:a Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
b Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
c Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN 37996, USA
Abstract:A (0 0 1) surface of silicon consists of terraces of two variants, which have an identical atomic structure, except for a 90° rotation. We formulate a model to evolve the terraces under the combined action of electric current and applied strain. The electric current motivates adatoms to diffuse by a wind force, while the applied strain motivates adatoms to diffuse by changing the concentration of adatoms in equilibrium with each step. To promote one variant of terraces over the other, the wind force acts on the anisotropy in diffusivity, and the applied strain acts on the anisotropy in surface stress. Our model reproduces experimental observations of stationary states, in which the relative width of the two variants becomes independent of time. Our model also predicts a new instability, in which a small change in experimental variables (e.g., the applied strain and the electric current) may cause a large change in the relative width of the two variants.
Keywords:Vicinal Si (0     1) surface   Electromigration   Surface stress   Instability
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