In situ Hochdruck- und Hochtemperatur-Untersuchungen an Siliciumsuboxiden mittels energiedispersiver Röntgenbeugung

In situ High-Pressure- and High-Temperature Studies of Siliconsuboxides via Energy Dispersive X-ray Diffraction The amorphous silicon compounds Si₂O₃, H₂Si₂O₄, HSiO_1.5, and SiO have been investigated under High-Pressure- and High-Temperature conditions in situ via energy dispersive X-ray diffraction with synchrotron radiation. The studies have been performed using the Multi Anvil High Pressure Device MAX-80, at HASYLAB, DESY-Hamburg, Germany. Except for SiO, at a pre-set pressure of 45 kbars the formation of Coesite was observed at heating. Commercially available SiO did not crystallize in any way, indicating that it seems not to consist of silicon(II)-oxide, but is in fact a mixture of silicon and silicondioxide, disproportionated on an atomic scale.