Abstract: | Fe4Si2Sn7O16: A Combination of FeSn6-Octahedra with Layers of (Fe3Sn)O6-Octahedra; Preparation, Properties, and Crystal Structure Fe4Si2Sn7O16 has been prepared by a solid state reaction at 900 °C from a mixture of Fe2O3, SnO2, Sn, and Si. The compound is a paramagnetic semiconductor. Results of Mössbauer and suszeptibility measurements as well as bond length-bond strength calculations lead to the possible ionic formulation Fe42+Si24+Sn12+Sn14+O162–. The compound crystallizes in the trigonal space group P3m1 (no. 164), with one formula unit per cell. Lattice parameters obtained by powder measurements are: a = 6.8243(6) Å, c = 9.1404(6) Å, γ = 120°, V = 368.6(1) Å3. The structure consists of layers of edge linked oxygen octehedra exactly centered by Sn and Fe in the ratio 1 : 3. Three plains of isolated SiO4 tetrahedra, FeSn6 octahedra and again SiO4 terahedra are inserted between two such layers. The layers are stacked along 001] and linked three-dimensionally by oxygen. |