| 多孔硅衬底上溅射沉积SiC:Tb薄膜的光致发光行为 |
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| 引用本文： | 徐大印,刘彦平,何志巍,方泽波,刘雪芹,王印月.多孔硅衬底上溅射沉积SiC:Tb薄膜的光致发光行为[J].物理学报,2004,53(8):2694-2698. |
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| 作者姓名： | 徐大印 刘彦平 何志巍 方泽波 刘雪芹 王印月 |
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| 作者单位： | 兰州大学物理科学与技术学院,兰州 730000 |
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| 基金项目： | 国家自然科学基金(批准号：50272027)资助的课题. |
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| 摘 要： | 在多孔硅衬底上用射频溅射法沉积了非晶的SiC:Tb薄膜. 对样品在N2中进行了不同温度的退火处理. 用傅里叶红外变换谱分析了样品的结构.用荧光光谱仪测试了样品的光致发光，在紫外、可见光区域观测到了强的发光峰.发现随着衬底加热温度和样品退火温度的变化，发光峰有明显的强度变化和微弱的蓝移现象.分析了产生这种现象的机理，得出了紫外区域的发光峰是由于氧缺乏中心引起的，而可见区的发光是由于Tb离子产生的.
关键词：
碳化硅
光致发光
氧缺乏中心
多孔硅
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| 关 键 词： | 碳化硅 光致发光 氧缺乏中心 多孔硅 |
| 文章编号： | 1000-3290/2004/53(08)/2694-05 |
| 收稿时间： | 2003-10-23 |
| 修稿时间： | 1/2/2004 12:00:00 AM |
The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate |
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| Xu Da-Yin,Liu Yan-Ping,He Zhi-Wei,Fang Ze-Bo,Liu Xue-Qin and Wang Yin-Yue.The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate[J].Acta Physica Sinica,2004,53(8):2694-2698. |
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| Authors: | Xu Da-Yin Liu Yan-Ping He Zhi-Wei Fang Ze-Bo Liu Xue-Qin and Wang Yin-Yue |
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| Abstract: | The SiC:Tb films were deposited on porous silicon substrate by rfsputtering. The samples prepared were annealed in N2 atmosphere at different temperatures, and Fourier transform infrared has been used to characterize the structure of them. We observed a strong photoluminescence(PL) spectrum at room temperature in the ultraviolet(UV) and visible regions. We found that the UV emission has obvious changed and a slight blue shift was observed with the change of annealing temperature. The UV and visible PLs were attributed to oxygen deficit center(ODC) and Tb3+ respectively. |
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| Keywords: | SiC photoluminescence ODC porous silicon |
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