| Abstract: | Investigation of the distribution of dislocations intersecting the free surface of (1, 0, 0), Si-doped Bridgman-grown GaAs wafers. The defect densities were determined by using molten KOH as the defect-revealing etch. Their distribution can well be described by the compound Poisson-gamma distribution. The corresponding formula for the chip-yield is derived and it is shown, under which conditions it goes over into that for the simple Poisson distribution. Further, it is shown how the finite dimension of failures can be taken into account. |
