Investigations of LiInSe2 Epitaxial Layers on {100}- and {110}-oriented Substrates with Sphalerite Structure by Means of RHEED

Epitaxial LiInSe₂ films were deposited by flash evaporation technique on {100}, {110} GaAs and {100} GaP. By means of geometrical considerations based on the concept of corresponding substrate and deposit planes epitaxial relationships can be predicted and compared with results from reflection high energy electron diffraction (RHEED). The epitaxial relationships are given for both rhombic (β-NaFeO₂-type) and tetragonal (chalcopyrite-type) LiInSe₂ deposits on {100}- and {110}-oriented sphalerite-type substrates.