Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH3)3 · N(CH3)3-Adduct Pyrolysis

Epitaxial layers of GaN have been grown on {1102} sapphire in atmospheric OMCVD system using Ga(CH₃)₃ · N(CH₃)₃ adduct and NH₃ as reactants. Optimum growth conditions for crystallographically perfect layers have been found at temperatures between 850 and 1000 °C. With increasing temperature the growth rate decreases whereas the concentration of free carriers increases. In photoluminescence spectra only the donor-acceptor pair recombination could be found. It is concluded that the donor oxygen (O_N) and the acceptor carbon (C_N) are the dominant impurities.