Native Point Defects and Nonstoichiometry in GaAs (I). Homogeneity Region of Gallium Arsenide

Homogeneity region and the concentration of dominant native point defects along its boundary are calculated by the method of quasichemical reactions with the use of experimental data on the structure type of solid solutions formed by the components in GaAs. The entropy and enthalpy of the formation of dominant native point defects in GaAs are obtained. Temperature ranges of the formation of microdefects-finely dispersed Ga and As precipitates are considered.