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AgGaSe2 on {100} and {110} GaAs—Special Features of Epitaxial Growth |
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| Authors: | A. Tempel B. Schumann |
| Abstract: | AgGaSe2 thin epitaxial layers onto {100} and {110} oriented GaAs substrates were prepared by flash evaporation technique and investigated by the RHEED method (reflection high energy electron diffraction). Special epitaxial relationships were found and the results will be discussed. |
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