Optimization of a non-cryogenic quantum infrared detector |
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Authors: | G Marre M Carras B Vinter V Berger |
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Institution: | a Thales Research and Technology, Domaine de Corbeville, Orsay F-91404, France;b Pôle “Materiaux et Phénomènes Quantiques”, Université Denis Diderot Paris 7 case 7021, 2 place de Jussieu, Paris 75251, France |
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Abstract: | A study of the optimization of the detectivity of a mid-infrared double heterostructure photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and provide a physical insight into the mechanisms dominating the dark current. The analysis is performed step by step, from a simple p–n junction to the full double heterostructure. The influence of temperature, barrier band gap energy in a double heterostructure, doping density in the active region, on diffusion and generation–recombination mechanisms is analyzed. It is finally shown how the performances of a double heterostructure photovoltaic detector can be improved by controlled doping of the active region. |
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Keywords: | Charge carriers Generation– recombination III– V semiconductor p– n diodes and heterojunctions Optoelectronic device characterization design and modeling Photodetectors |
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