The propagator of conduction electrons in semiconductors with a delta-barrier or a delta-well potential II. The electron density profile

The density of the conduction electrons near a delta-barrier and near a delta-well is calculated in a one-dimensional non-degenerate semiconductor, on condition that interband transitions may be neglected. The dispersion function E(k) in the bottom part of the conduction band is fitted by a function resulting from the author's theory of the Wiener process modified by a Poisson random sequence of very short shocks [V.B., J. Phys.: Math. Gen. 25 (1992) 6027]. In an interval (which is wide enough), this function can simulate the Kane (two-band) dispersion function with the non-parabolicity parameter = 1/E_G.