Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell |
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Authors: | M. Izzi M. Tucci L. Serenelli P. Mangiapane M. Della Noce I. Usatii E. Esposito L. V. Mercaldo P. Delli Veneri |
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Affiliation: | 1. ENEA Casaccia Research Centre, Rome, Italy 2. ENEA Portici Research Centre, Portici, NA, Italy
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Abstract: | In this work we propose to replace the emitter layer of the n-type doped a-Si:H/p-type doped crystalline silicon heterojunction solar cell, with an n-type doped SiO x amorphous oxide layer. The n-type doped SiO x :H shows a lower activation energy and higher carrier mobility value with respect to the n-type doped a-Si:H. Moreover, higher transmission, below 500 nm of wavelength, and higher conductivity are measured. The relevance of transparency of the (n) a-SiO x :H has been studied using that film in solar cells. The electrical parameters revealed a solar cell efficiency of 15.8 %. Moreover, the effect of TCO as a front side cell electrode is considered and discussed on the base of its workfunction when applied on top of the n-type doped SiO x emitter layer using also numerical simulations. |
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