Generation and recombination in two-dimensional bipolar transistors |
| |
Authors: | Behnaz Gharekhanlou Sina Khorasani |
| |
Affiliation: | 1. School of Electrical Engineering, Sharif University of Technology, P. O. Box 11365-9363, Tehran, Iran
|
| |
Abstract: | We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley–Read–Hall model to study these process. First, we investigate the current–voltage characteristics of a graphone p–n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|