Annealing-induced changes of the 3.31 eV emission in ZnO nanorods |
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| Authors: | Luwei Sun Haiping He Shuili Li Zhizhen Ye |
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| Institution: | 1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P.R. China
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| Abstract: | The effect of annealing on the 3.31 eV (A line) emission in ZnO nanorods is studied in detail by temperature-dependent photoluminescence (PL). Annealing results in obvious changes in peak energy and lineshape of the A line, indicating different luminescence origin in the as-grown and annealed ZnO nanorods. In the as-grown nanorods, the A line is a result of competition between free-to-neutral acceptor (FA) transition and the first longitude optical phonon replica of free exciton (FX-1LO) recombination. While for the annealed nanorods, FA transition disappears and the A line is attributed to FX-1LO only. In combination with trace impurity analysis, the results allow us to conclude that the acceptor involved in the FA transition is stacking faults rather than unintentional acceptor impurities. |
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