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Investigation of the phonon band gap effect on Raman-active optical phonons in SrMoO4 crystal
Institution:1. Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya 466-8666, Japan;2. A.M. Prokhorov General Physics Institute Russian Academy of Sciences, Vavilov str., 38, Moscow 119991, Russia;1. Venture Business Laboratory, Akita University, Gakuen Machi 1-1, Tegata, Akita, 010-8502, Japan;2. Mathematics and Computer Science Division, Argonne National Laboratory, Argonne, IL, 60439, USA;3. Department of Materials Science and Engineering, Akita University, Gakuen-machi 1-1, Tegata, Akita, 010-8502, Japan;4. Department of Materials Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan;5. Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, China;1. Baikal Institute of Nature Management, Siberian Branch, Russian Academy of Sciences, Sakh’yanova St. 6, Ulan-Ude 670047, Buryat Republic, Russia;2. Buryat State University, Smolin St. 24a, Ulan-Ude 670000, Buryat Republic, Russia;3. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Acad. Lavrentiev Ave. 3, Novosibirsk 630090, Russia;4. Novosibirsk State University, Pirogov St. 2, Novosibirsk 630090, Russia;5. Lomonosov Moscow State University, Leninskie Gory 1, Moscow 119991, Russia;1. Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata, 700009, India;2. St. Paul’s Cathedral Mission College, 33/1, Raja Rammohan Roy Road, Kolkata, 700009, India;1. Institute of Physics, University of Tartu, Ravila 14c, 50411, Estonia;2. Skobeltsyn Institute of Nuclear Physics, M.V. Lomonosov Moscow State University, Moscow 119991, Russia;3. Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk, Russia;4. Institute of Light and Matter, CNRS, University Lyon1, Villeurbanne 69622, France;1. Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000, Algeria;2. Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey;3. Yüzüncü Y?l University, Faculty of Education, Department of Physics, Van, 65080, Turkey;4. School of Computer Science & Engineering, Faculty of Engineering, SMVD University, Kakryal, Katra, 182320, J & K, India;5. Faculty of the Electrical Engineering, Czestochowa University of Technology, Al. ArmiiKrajowej 17, 42-200, Czestochowa, Poland;6. New Technologies-Research Centre, University of West Bohemia, Univerzitni 8, 306 14, Pilsen, Czechia;7. Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University Setif 1, 19000, Setif, Algeria;8. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh, 11451, Saudi Arabia;9. Department of Physics, Pachhunga University College, Aizawl, 796001, India;10. Material Science Research Laboratory, Department of Physics, S.V. College, Aligarh, 202001, U.P., India
Abstract:The phonon dispersions of SrMoO4 crystal are calculated using the lattice dynamical calculations approach. Spontaneous Raman spectra in the SrMoO4 were measured in the temperature range from 10 K to 295 K, and the temperature dependence of the linewidth of the Bg (95 cm?1) and Ag (888 cm?1) Raman modes was analyzed using the lattice dynamical perturbative approach. We found that different behaviors of these two modes in the case of temperature broadening could be attributed to the large energy band gap in the phonon spectrum resulting in different anharmonic interactions. The calculated temperature dependence of the linewidth of Ag (888 cm?1) mode was well accounted for the experimental one by including both down-conversion by the cubic term and the dephasing by quartic term. The dephasing processes are increased only at high temperatures and the effect of dephasing is related to the size of a large phonon band gap.
Keywords:Raman spectra  Linewidth  Phonon dispersions  Lattice dynamical perturbative approach  Dephasing effect
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