Novel post‐process for the passivation of a CMOS biosensor |
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Authors: | M. Schindler,S. K. Kim,C. S. Hwang,C. Schindler,A. Offenhä usser,S. Ingebrandt |
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Abstract: | Sensors, which are designed and fabricated in complementary metal oxide semiconductor (CMOS) technology, have become increasingly important in the field of bioelectronics. The standardized industry processes enable a fast, cheap, and reliable fabrication of biosensor devices with integrated addressing and processing units. However, the interfacing of such chips with a liquid environment has been a challenge in recent years. Especially for interfacing living cells with CMOS biosensors different elaborate post‐processes have been proposed. In this article we describe a novel and single step passivation of a CMOS biosensor using a bio‐compatible high‐permittivity thin film, which can be directly applied to the top aluminium layer of a CMOS process. The aluminium oxide and hafnium oxide multi‐layer thin films were prepared using atomic layer deposition at low process temperatures. Electrical I –V and capacitance measurements as well as electrochemical leakage current measurements were performed on films grown on aluminium bottom electrodes. The films showed a very low leakage current and were stable up to 6 V at a thickness of just 50 nm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | 68.37.Ps 73.40.− c 81.15.Hi 81.65.Rv 87.85.dh 87.85.fk |
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