Silicon nanowires grown from Au-coated Si substrate |
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Authors: | Xing YJ Yu DP Xi ZH Xue ZQ |
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Institution: | (1) Department of Electronics, Peking University, Beijing 100 871, China, CN;(2) School of Physics, Mesoscopic Physics National Laboratory, and Electron Microscopy Laboratory, Peking University, Beijing 100 871 China , CN |
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Abstract: | Amorphous Si nanowires were grown on an Au-coated Si substrate by heat treatment at 1000 °C under an H2 atmosphere. The nanowires have a length of several tens of a micron and a diameter of 10–20 nm. The growth mechanism of the
nanowires was investigated and explained with a solid–liquid–solid model.
Received: 11 July 2002 / Accepted: 7 July 2002 / Published online: 4 December 2002
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ID="*"Corresponding author. Fax: +86/10-62751615, E-mail: yudp@pku.edu.cn |
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Keywords: | PACS: 61 46 +w 81 16 -c |
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