The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation |
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| Authors: | D I Tetelbaum S A Trushin A N Mikhaylov V K Vasil'ev G A Kachurin S G Yanovskaya D M Gaponova |
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| Institution: | a Physico-Technical Research Institute of Nizhnii Novgorod State University, Gagarin prospect 23/3, 603600, Nizhnii Novgorod, Russia;b Institute of Semiconductor Physics, Lavrent'eva prospect 13, 630090, Novosibirsk, Russia;c Institute for Physics of Microstructures, GSP-105, 603950, Nizhnii Novgorod, Russia |
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| Abstract: | The influence of P ion doping on the photoluminescence (PL) of the system of nanocrystals in SiO2 matrix (SiO2:Si) both without annealing and after annealing at various temperatures (provided before and after additional P implantation) is investigated. The Si and P implantation was carried out with ion energies of 150 keV and doses ΦSi=1017 cm−2 and ΦP=(0.1–300)×1014 cm−2 (current density j3 μAcm−2). The system after Si implantation was formed at 1000°C and 1100°C (2 h). For the case of SiO2:Si system as-implanted by P, the intensity of PL was drastically quenched, but partially retained. As for the step-by-step annealing (at progressively increased temperatures) carried out after P implantation, the sign and degree of doping effect change with annealing temperature. The possible mechanisms of these features are discussed. |
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| Keywords: | Nanocrystalline silicon Silicon dioxide Quantum dots Phosphorus doping Ion implantation Photoluminescence |
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