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Characterization of p-type ZnSe grown by MOVPE; excitonic emission lifetime measurements |
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| Authors: | Ken-ichi Ogata Takashi Kera Daisuke Kawaguchi Shizuo Fujita and Shigeo Fujita |
| Institution: | Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan |
| Abstract: | Time-resolved photoluminescence (TRPL) measurements are made on p-type nitrogen-doped ZnSe grown by photoassisted metalorganic vapor phase epitaxy (MOVPE) together with post-growth thermal annealing, in order to investigate optical quality of the layers. It is suggested that the annealing degrades the layer quality and the MOVPE samples have more non-radiative recombination centers compared with MBE samples. A key issue for high quality p-ZnSe by MOVPE seems to be optimization of annealing conditions. |
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