| P型Hg0.76Cd0.24Te的子能带结构 |
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| 引用本文： | 刘坤,褚君浩.P型Hg0.76Cd0.24Te的子能带结构[J].红外与毫米波学报,1994,13(3):199-205. |
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| 作者姓名： | 刘坤 褚君浩 |
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| 作者单位： | 中国科学院上海技术物理研究所，红外物理国家重点实验室，中国科学院上海技术物理研究所 |
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| 摘 要： | 制备了Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２４）ＭＩＳ器件，用自制的高精度差分电容谱仪测量了器件的Ｃ－Ｖ谱。根据褚君浩等提出的实验模型拟合测得的电容谱，获得了反型层电子子能带结构、，与本文的修正变分自洽方法计算结果基本一致。并获得了有关界面态与绝缘层固定电荷的结果。
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| 关 键 词： | 电容谱 能带结构 碲镉汞 子能带 |
THE SUBBAND STRUCTURE OF P-TYPE Hg_(0.76)Cd_(0.24)Te |
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| Liu Kun,Chu Junhao,Chen Siyuan,Tang Dingyuan.THE SUBBAND STRUCTURE OF P-TYPE Hg_(0.76)Cd_(0.24)Te[J].Journal of Infrared and Millimeter Waves,1994,13(3):199-205. |
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| Authors: | Liu Kun Chu Junhao Chen Siyuan Tang Dingyuan |
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| Abstract: | The MIS structure of p-type Hg0.76Cd0.24Te bulk material was prepared and its capacitance-voltage characteristic was measured by using a self-established differential capacitance spectrometer. On the basis of Chu's experimental model, the experimental data were fitted and the subband structure in the n-type inversion layer was obtained. The experimental result is in good agreement with that calculated from the revised self-consistent theory. |
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| Keywords: | capacitance spectrum inversion layer subband structure |
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