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On the topographic and optical properties of SiC/SiO2 surfaces
Authors:Stanislav Jureckova  Maria Jureckova  Ferdinand Chovanec  Hikaru Kobayashi  Masao Takahashi  Milan Mikula  Emil Pina
Affiliation:Stanislav Jurečka, Mária Jurečková, Ferdinand Chovanec, Hikaru Kobayashi, Masao Takahashi, Milan Mikula and Emil Pinčík
Abstract:The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.
Keywords:SiC  interface roughness  multifractal systems  AFM, STM  optical properties
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