Effect of indium doping on photoelectrochemical properties of Cd0.9Zn0.1Se photosensitive films

Indium doped Cd_0.9Zn_0.1Se films have been synthesized by chemical bath deposition method. The deposited films act as photoanode in photoelectrochemical (PEC) cells. The varying concentration of indium from 0.01 to 1.0 mol% was used. The film thickness increases from 0.72 to 0.80 μm as doping concentration increases up to 0.1 mol%, thereafter it decreases. The cell configuration is n-Cd_0.9Zn_0.1Se:In|NaOH (1 M)+S (1 M)+Na₂S (1 M)|C_(graphite). The various performance parameters were examined with respect to doping concentration of indium. It is found that fill factor and efficiency is maximum for 0.1 mol% indium photosensitive films. This is due to low resistance, high flat band potential, maximum open circuit voltage as well as maximum short-circuit current. The barrier height was examined from the temperature dependence of the reverse saturation current. The lighted ideality factor was found to be minimum for 0.1 mol% indium photosensitive films. A cell utilizing doping photosensitive films showed a wider spectral response. The utility of this work is in improving efficiency of the PEC cell.