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Photoconductive studies on electron beam evaporated CdSe films |
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| Authors: | K.R. Murali K. Sivaramamoorthy S. Asath Bahadur |
| Affiliation: | a Central Electrochemical Research Institute, Karaikudi 630 006, India b Department of Physics, Rajapalayam Raju's College, Rajapalayam, India c Department of Chemistry, Kalasalingam University, Krishnankoil, India d Department of Physics, Kalasalingam University, Krishnankoil, India |
| Abstract: | Thin CdSe films were electron beam evaporated. The CdSe powder synthesized in the laboratory by a chemical method was used as source for the deposition of films. Clean glass and titanium substrates were used as substrates. The substrate temperature was varied in the range of 30-250 °C. X-ray diffraction studies indicated polycrystalline hexagonal structure. The band gap was 1.65 eV. The grain size was 15-30 nm with increase of substrate temperature. Photoconductive cells fabricated with the doped and undoped films have exhibited high photosensitivity and high signal to noise ratio. The current voltage characteristics were linear. |
| Keywords: | Semiconductors Thin films II-VI Electronic materials |
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