Effects of level broadening and electron overheating in tunneling structures based on metal clusters |
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Authors: | A V Babich and V V Pogosov |
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Institution: | (1) Dept. Physics, Uppsala University, Uppsala, Sweden; |
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Abstract: | The effect of level broadening and electronic subsystem overheating of disk-shaped and spherical gold clusters/islands on
the current-voltage characteristic of the three-electrode structure has been studied. A scheme for calculating the electronic
level broadening in the one-dimensional case of rectangular barriers has been proposed. In the two-temperature electron-ion
model of a metal cluster, taking into account the size dependence of the Debye frequency, the kinetic electron temperature
has been estimated as a function of the bias voltage. At low ion temperatures, the broadening and electron overheating effects
result in disappearance of steps of quantum and Coulomb staircases, i.e., a strong smoothness of the current-voltage characteristic
even in structures on clusters consisting of a denumerable number of atoms, which is actually observed experimentally. |
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Keywords: | |
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