(1) Institut Laue-Langevin, BP 156, 38042 Grenoble Cedex 9, France, FR
Abstract:
We consider a two-dimensional semiconductor with a local attraction among the carriers. We study the ground state of this system as a function of the semiconductor gap. We find a direct transition from a superconducting to an insulating phase for no doping at a critical value, the single particle excitations being always gapped. For finite doping we find a smooth crossover. We calculate the critical temperature due to both the particle excitations and the Berezinkii-Kosterlitz-Thouless transition. Received 8 December 1998