基于电子回旋共振-等离子体增强金属有机物化学气相沉积技术生长GaMnN稀磁半导体的研究

利用电子回旋共振-等离子体增强金属有机物化学气相沉积 (ECR-PEMOCVD)方法，采用二茂锰(Cp₂Mn)作为Mn源，高纯氮气作为氮源，三乙基镓(TEGa)作为Ga源，在蓝宝石(α-Al₂O₃)(0001)衬底上外延生长GaMnN稀磁半导体薄膜.反射高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)表征了GaMnN薄膜的晶体结构和表面形貌.GaMnN薄膜均表现出良好的(0002)择优取向，表明制备的薄膜倾向于关键词：GaMnN薄膜稀磁半导体铁磁性居里温度

Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition

Diluted magnetic semiconductor film GaMnN was grown on sapphire (α-Al₂O₃) substrate using biscyclopentyldienyl manganese (Cp₂Mn), N₂ and TEGa by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD) . The crystal structure and surface topography of the GaMnN films were characterized by RHEED, XRD and AFM. GaMnN films exhibit good (0002) preferred orientation, showing the films are inclined to c-axis growth and retain good wurtzite structure. The surface topography of GaMnN film is composed of many submicron grains piled in the consistent orientation. The magnetism of films is characterized by SQUID. SQUID shows that the film is ferromagnetic, which comes probably only from the ternary phase GaMnN and the Curie temperature of GaMnN film is higher than 350 K. Moreover, higher Mn concentration can enhance the Curie temperature of the film.