The kinetic of the oxidation of InSn48 |
| |
| Authors: | A Preuß B Adolphi and T Wegener |
| |
| Institution: | (1) Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Mommsenstrasse 13, D-01062 Dresden, Germany |
| |
| Abstract: | The oxidation of InSn48 has been investigated at partial pressures between 10-8 Pa and 10+4 Pa over a temperature range from 22 °C to 250°C with different analytical methods. The oxide film contains a mixture of several oxides, although indium oxide forms preferentially. Below the melting point a logarithmic growth, and above this, a parabolic growth of the oxide film has been observed. The oxide film formed in air at 250°C does not become thicker than 50 nm in the first 5 min of oxidation. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
