Modeling of Nonvolatile Quantum Dot Gate Structures Operating at Millimeter Wave Frequencies for Memory Applications |
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Authors: | E-S Hasaneen and F C Jain |
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Institution: | (1) Electrical & Computer Engineering Department, University of Connecticut, 371 Fairfield Rd., Unit 1157, Storrs, CT, 06269-1157 |
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Abstract: | This paper models electrical characteristics of quantum dot nonvolatile memory cells during READ and WRITE operations. Capacitance-voltage characteristics are calculated by self-consistently solving the Schrodinger and Poisson equations. The memory access time for a 32 kb NOR array is 73 ps, which reduces to 13 ps in lightly-doped sheath (LDS) structures. The results show that a change in the quantum dot charge has a strong effect on drain to source current. The calculated cutoff frequency f
T is 135 GHz for a 0.1 m channel length Si field-effect memory structures. The application of a quantum dot memory cell as a programmable resistor in RF circuits is presented. By changing the quantum dot charge, the resistor values can be changed by 25%. |
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Keywords: | quantum dot gate memory high frequency FETs floating gate tunneling nonvolatile memory |
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