掺Er/Pr的GaN薄膜深能级的研究

利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了 电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0.270eV处有一个深能级；GaN注 入Er经900℃,30min退火后的样品出现了四个深能级，能级位置位于导带下0.300 eV,0.188 eV,0.600 eV 和0.410 eV；GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级 ，能级位置位于导带下0.280 eV,0.190 eV,0.610 eV 和0.390 eV；对每一个深能级的来源 进行了讨论.光谱研究表明，掺Er的GaN样品经900℃,30min退火后，可以观察到Er的1538nm 处的发光，而且对能量输运和发光过程进行了讨论. 关键词：GaNErPr深能级

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the ele ctrical properties of metal organic chemical vapor deposition grown undoped, Er- implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV be low the conduction band was found in the as-grown GaN films. But four defect le vels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction b and were found in the Er-implanted GaN films after annealing at 900 ℃ for 30 mi n, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV b elow the conduction band were found in the Pr-implanted GaN films after annealin g at 1050 ℃ for 30min. The origins of the deep defect levels are discussed. Aft er annealing at 900℃ for 30min in a nitrogen flow, Er-related 1538nm luminescen ce peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.