Spectrum analysis of interband optical transmissions and quantitative model of eigen-energies and absorptions in In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures
(1) Kyushu Institute of Technology, Iizuka, Fukuoka, 820-8502, Japan;(2) ARC, Hitachi Cable Ltd., Tsuchiura, Ibaragi, 300-0026, Japan;(3) CRL, Hitachi Ltd., Kokubunji, Tokyo, 185-8601, Japan
Abstract:
Interband transmission spectra were measured for three In0.53Ga0.47As/In0.52Al10.48As multi-quantum well specimens having different carrier concentrations by modulation-doping. Spectral shapes of transmissions were clear steplike structures but exciton peaks of first order transitions were masked with the carrier concentrations. The spectral shapes changed hardly between 100 and 310 K. Using our parameters of quantum wells, calculated eigen-energies for three specimens agreed with experiments and absorption coefficients reproduced experimental transmission spectra at any temperature.