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Pac studies of ion implanted silicon |
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| Authors: | D. Forkel F. Meyer W. Witthuhn H. Wolf M. Deicher M. Uhrmacher |
| Affiliation: | 1. Physikalisches Institut der Universit?t Erlangen-Nürnberg, Erwin-Rommel-Strae 1, D-8520, Erlange, W-Germany 2. Physikalisches Institut der Universit?t Konstanz, Bücklestrae 13, D-7750, Konstanz, W-Germany 3. Physikalisches Institut der Universit?t G?ttingen, W-Germany |
| Abstract: | The annealing behaviour of radiation induced defects in ion implanted silicon is studied by the perturbed angular correlation method (PAC). Between 700 K and 1000 K the trapping and detrapping of vacancy-oxygen complexes is observed. In annealed p-Si a well defined, axially symmetric electric field gradient (EFG) appears at low temperatures. This EFG is oriented to the surface and not to any crystallographic direction. The size of the EFG depends strongly on the surface charge. |
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