Magnetooptic measurements of the cyclotron mass and g-factor of light holes in GaAs

An emission line appearing in the hot-luminescence spectrum of GaAs at a frequency shifted from the laser line by the cyclotron energy of light holes is observed and investigated. Analysis of the magnetooscillations of the intensity of this line shows that the line is due to the recombination of a photoexcited electron and a light hole after the hole undergoes energy relaxation between Landau levels. The dependence of the cyclotron mass and g factor of light holes on the hole energy was measured directly and a very strong nonparabolicity of the valence band of GaAs, several times greater than the theoretical estimates, was observed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 11, 766–771 (10 December 1996)