| 溶胶—凝胶法制备掺镧钛酸铋铁电薄膜 |
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| 引用本文： | 喻驰,朱建国,肖定全,袁小武,朱基亮,乐夕.溶胶—凝胶法制备掺镧钛酸铋铁电薄膜[J].压电与声光,2001,23(2):138-141. |
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| 作者姓名： | 喻驰 朱建国 肖定全 袁小武 朱基亮 乐夕 |
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| 作者单位： | 四川大学材料科学系, |
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| 基金项目： | 国家“八六三”计划资助项目(863-0020-0070)；国家教育部高等院校骨干教师计划资助项目 |
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| 摘 要： | 利用溶胶-凝胶法在Si（100）及Pt/Ti/Si（100）衬底上制备了Bi3.5La0.5Ti3O12(BLT-5）铁电薄膜，研究了在不同退火条件下BLT-5薄膜的结晶性能。经650℃、30min退火处理的BLT-5铁电薄膜的矫顽场Et=67kV/cm，剩余极化强度Pt=11.2μC/cm∧2，BLT-5铁电薄膜呈现较好的抗疲劳特性，可望用于制备高容量铁电随机存取存储器。
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| 关 键 词： | 钛酸铋 铁电薄膜 溶胶－凝胶法 掺镧 |
| 文章编号： | 1004-2474(2001)02-0138-04 |
| 修稿时间： | 2000年10月16 |
Preparation of Lanthanum
Modified Bismuth Titanate Ferroelectric Thin Films by Sol-Gel Processing |
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| YU Chi,ZH Jiang-guo,XIAO Ding-quan,YUAN Xiao-wu,ZHU Ji-liang,YEU Xi.Preparation of Lanthanum
Modified Bismuth Titanate Ferroelectric Thin Films by Sol-Gel Processing[J].Piezoelectrics & Acoustooptics,2001,23(2):138-141. |
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| Authors: | YU Chi ZH Jiang-guo XIAO Ding-quan YUAN Xiao-wu ZHU Ji-liang YEU Xi |
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| Abstract: | Lanthanum modified bismuth titanate(Bi4-xLaxTi3O12,BLT-10x)ferroelectric thin films were prepared by Sol-Gel processing using tetrabyl titanate,bismuth nitrate and lanthanum nitrate.Polycrystalline BLT-5 thin films were obtained at relatively low annealing temperatures of 600～650℃.The typical cohesive electric field (Ec) and remnant polarization(Pt) for BLT-5 thin films annealed at 650℃,30 min were Ec=57 kV/cm,Px=11.2 μC/cm2.The BLT-5 thin films show good fatigue-free property and could be used in fabricating high density FRAM. |
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| Keywords: | bismuth titanate ferroelectric thin films Sol-Gel processing |
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