首页 | 本学科首页   官方微博 | 高级检索  
     检索      

磁控溅射法制备钛掺杂WO3薄膜结构和性能的研究
引用本文:胡远荣,王丽阁,李国卿,刘振东.磁控溅射法制备钛掺杂WO3薄膜结构和性能的研究[J].光学学报,2007,27(3):559-562.
作者姓名:胡远荣  王丽阁  李国卿  刘振东
作者单位:大连理工大学三束材料改性国家重点实验室,大连,116024;大连理工大学三束材料改性国家重点实验室,大连,116024;大连理工大学三束材料改性国家重点实验室,大连,116024;大连理工大学三束材料改性国家重点实验室,大连,116024
摘    要:采用中频孪生非平衡磁控溅射技术制备钛掺杂WO_3薄膜。运用X射线衍射(XRD),拉曼光谱、紫外分光光度计、计时安培分析仪和原子力显微镜(AFM)等测试手段分析了钛掺杂WO_3薄膜的结构和光学性能。实验结果表明,掺杂后的薄膜在相同的热处理条件下晶化程度降低,晶粒细化,离子抽出和注入的通道大大增多,钛掺杂原子数分数0.051的着色响应速度提高,循环寿命提高了4倍以上,但着色后透射率下降。

关 键 词:薄膜光学  钛掺杂氧化钨薄膜  电致变色  磁控溅射
文章编号:0253-2239(2007)03-0559-4
收稿时间:2006/6/26
修稿时间:2006-06-26

Structure and Properties of Ti-Doped WO3 Films Prepared by Magnetron Sputtering Method
Hu Yuanrong,Wang Lige,Li Guoqing,Liu Zhendong.Structure and Properties of Ti-Doped WO3 Films Prepared by Magnetron Sputtering Method[J].Acta Optica Sinica,2007,27(3):559-562.
Authors:Hu Yuanrong  Wang Lige  Li Guoqing  Liu Zhendong
Institution:State Key Laboratory for Material Modification by Laser, Electron and Ion Beams, Dalian University of Technology, Dalian 116024
Abstract:Ti-doped WO_3 films were prepared by mid-frequency dual-target magnetron sputtering method.The Ti-doped WO_3 films were characterized with X-ray diffraction (XRD),Raman spectroscopy,ultraviolet spectrophotometer,chronoamperometry and atomic force microscopy (AFM) .The results indicate that after doping Ti,its crystallinity decreases at the same annealing temperature,and its surface roughness decreases dramatically with the increase of holes for ion injection and extraction,Accordingly,the response speed of the WO_3 film doped with fraction of atom number 0.051 of Ti is greatly improved compared with the undoped film,and its cycle life is increased more than four times,but the spectral transmittance decreases after doping.
Keywords:thin film optics  Ti-doped WO_3 film  electrochromics  magnetron sputtering
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号