Crystallographic structure and defects in epitaxial bismuth films grown on mica

Atomic force microscopy is used to image the surface relief of epitaxial Bi films grown on mica substrates. Monatomic terrace steps are readily resolved, which provide detailed information on crystal growth and defect structures. The films grow from the coalescence of isolated three-dimensional islands, however, each island grows layer-by-layer. The islands are triangular in shape and when they coalesce to form a continuous film, their structures are either in-phase, and consequently large crystallites are formed, or they are out-of-phase and defect structures are formed. The most common defects observed are twinning and stacking faults. Images showing the microscopic details of stacking faults, twinning, and grain boundaries are observed as a result of islands coalescing to form a continuous film.