| 有序GaxIn1—xP（x=0.52）光致发光谱研究 |
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| 引用本文： | 吕毅军 俞容文. 有序GaxIn1—xP（x=0.52）光致发光谱研究[J]. 发光学报, 1999, 20(1): 14-16 |
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| 作者姓名： | 吕毅军 俞容文 |
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| 作者单位： | 厦门大学物理系 |
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| 基金项目： | 国家自然科学基金,福建省自然科学基金 |
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| 摘 要： | 报道了对有序ＧａｘＩｎ１－ｘＰ（ｘ＝０．５２）样品的变温和变激发功率密度的ＰＬ谱的研究。在低温Ｔ＝１７Ｋ，低激发功率密度下，谱线呈双峰结构，在低激发功率密度下升高温度，低能端的发光峰发生热猝灭，并在８５Ｋ完全消失。
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| 关 键 词： | 有序度 Ⅲ－Ⅴ族 半导体 光致发光谱 镓铟磷 |
INVESTIGATION ON THE PHOTOLUMINESCENCE OF ORDERED Ga x In 1- x P( x =0.52) |
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| Lu Yijun Yu Rongwen Zheng Jiansheng. INVESTIGATION ON THE PHOTOLUMINESCENCE OF ORDERED Ga x In 1- x P( x =0.52)[J]. Chinese Journal of Luminescence, 1999, 20(1): 14-16 |
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| Authors: | Lu Yijun Yu Rongwen Zheng Jiansheng |
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| Abstract: | An investigation on the properties of the temperature dependence and the excitation intensity dependence of photoluminescence of ordered Ga 0.52 In 0.48 P was carried out. Under the condition of low temperature of T =17K and low excitation intensity, the spectrum profile showed a double peaks structure. Changing the temperature and the excitation intensity respectively, the relative phenomena were discussed and a reasonable explanation was given. |
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