Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy |
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| Authors: | YC Kim BH Son HY Jeong KH Park YH Ahn |
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| Institution: | 1. Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, South Korea;2. Device Technology Division, Korea Advanced Nano Fab Center, Suwon 16229, South Korea |
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| Abstract: | The band alignment in AlGaN/GaN HEMT devices was investigated using scanning photocurrent microscopy (SPCM) with UV and visible light sources. The polarity of the SPCM on the conduction channel exhibited a switching behavior from p-type to n-type response as the gate bias was increased. The flat-band voltage, which was higher than the DC turn-on voltage, indicates that an ohmic metallic contact was formed for electron transport. We obtained the band offset between the conduction band and the metal Fermi level, which yielded a value of 2.1 eV on average. |
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| Keywords: | Corresponding author GaN HEMT SPCM 2DEG |
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