An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response |
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| Authors: | Il-Ho Ahn Jihoon Kyhm Juwon Lee Sangeun Cho Yongcheol Jo Deuk Young Kim Soo Ho Choi Woochul Yang |
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| Affiliation: | 1. Quantum-functional Semiconductor Research Center (QSRC), Dongguk University, Seoul 04620, Republic of Korea;2. Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea |
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| Abstract: | We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA. |
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| Keywords: | Corresponding author. Photocurrent transient measurement Variable-magnetic-field Hall measurement Mobility spectrum analysis |
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