Characterization of in-situ time-resolved optical spectra during excimer-laser crystallization |
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Authors: | Chil-Chyuan Kuo |
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Institution: | (1) Department of Mechanical Engineering and Graduate Institute of Electro-Mechanical Engineering, Mingchi University of Technology, Gungjuan Road 84, Taishan, Taipei, Hsien 243, Taiwan, R.O.C. |
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Abstract: | A real-time in-situ time-resolved (~1 ns) optical reflectivity and transmission (TRORT) measurement system combining two He–Ne
probe lasers, a digital oscilloscope, and three fast photodiodes is developed to investigate the rapid phase-change processes
of Si thin films during the excimer-laser crystallization (ELC). The changes in both reflectivity and transmission of Si thin
films during ELC are recorded by the TRORT measurement system. Melting and resolidification behaviors of Si thin films during
ELC are interpreted. The fall time of liquid Si is reduced with increase in the excimer-laser energy density, while the rise
time of liquid Si remains approximately constant at 5 ns. The first small peak in the reflectivity spectrum is proved to be
not a phenomenon of explosive crystallization. |
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Keywords: | Characterization in-situ time-resolved optical spectra excimer-laser crystallization Si thin films explosive crystallization |
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