| Nd薄膜靶表面氧化过程研究 |
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| 引用本文： | 赖珍荃,陈建荣.Nd薄膜靶表面氧化过程研究[J].强激光与粒子束,1997,9(2):289-292. |
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| 作者姓名： | 赖珍荃 陈建荣 |
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| 作者单位： | 同济大学物理系，上海，200092，南昌大学物理系，南昌，330047 |
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| 基金项目： | 国家863激光技术领域资助 |
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| 摘 要： | 用Ａｕｇｅｒ电子能谱（ＡＥＳ）对Ｘ光激光实验使用的Ｎｄ薄膜靶的表面氧化进行了分析，结合Ａｒ离子束刻蚀进行元素的深度分布剖析，得到了表面氧化层厚度，所得结果与Ｒｕｔｈｅｒ－ｆｏｒｄ背散射（ＲＢＳ）方法测量的结果相吻合。实验表明，样品暴露在空气中２０至３０ｍｉｎ，氧化即基本达到饱和，相应的氧化层厚度约为２０ｎｍ。
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| 关 键 词： | X光激光 AES 钕薄膜靶 表面氧化 激光 Nd thin film oxidisation X ray laser AES |
| 收稿时间： | 1900-01-01; |
RESEARCH ON SURFACE OXIDIZING PROCESS OF Nd THIN FILM TARGET |
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| Lai Zhenquan ab,Chen Jianrong a,Du Baoqi a,Chen Lingyan a,Wang Jue a a .Physics.RESEARCH ON SURFACE OXIDIZING PROCESS OF Nd THIN FILM TARGET[J].High Power Laser and Particle Beams,1997,9(2):289-292. |
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| Authors: | Lai Zhenquan ab Chen Jianrong a Du Baoqi a Chen Lingyan a Wang Jue a a Physics |
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| Institution: | Lai Zhenquan ab,Chen Jianrong a,Du Baoqi a,Chen Lingyan a,Wang Jue a a .Physics Department,Tongji University,Shanghai 200092 b.Physics Department,Nanchang University,Nanchang 330047 |
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| Abstract: | The process of the surface oxidizing of Nd thin films used in X-ray laser experiment is studied through AES method combined with Ar ion beam etching. The experimental results, which agree well with that of RBS, show that the surface oxidisation of Nd is saturated just 20~30 minutes after the sample exposed in air, the max thickness of oxide layer is about 20nm, and the main composition of oxide layer is NdO. |
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| Keywords: | Nd thin film oxidisation X ray laser AES |
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