DC—12GHz GaAs微波单片集成开关 |
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引用本文: | 陈继义,莫火石.DC—12GHz GaAs微波单片集成开关[J].固体电子学研究与进展,1991,11(1):2-7. |
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作者姓名: | 陈继义 莫火石 |
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作者单位: | 南京电子器件研究所 210016
(陈继义,莫火石),南京电子器件研究所 210016(陈克金) |
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摘 要: | 本文介绍了全气密陶瓷封装GaAs MMIC开关的设计方法和制造工艺.研制成的GaAsMMIC单刀单掷开关在DC-12GHz频带内,插入损耗为0.3—1.4dB,隔离度为19—27dB,反射损耗大于11dB,开关速度小于1ns,8GHz下功率处理能力大于25dBm.
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关 键 词: | GaAs 微波集成开关 陶瓷封装 开关 |
DC-12GHz GaAs MMIC Switch |
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Abstract: | The paper describes a design method and fabrication technology of GaAs MMIC switch in airtight ceramic package. The developed GaAs MMIC SPST switch has an insertion loss of 0.3-1.4dB over DC-12GHz frequency band with a return loss of better than 11dB. An isolation increases with frequency from 19dB at DC to 27dB at 12GHz. The SPST switch demonstrates a switching time less than 1ns and a power-handling capability of batter than 25dBm at 8GHz. |
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