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Behavior of silicon implanted in gallium arsenide during a radiative anneal
Authors:V. M. Ardyshev  M. V. Ardyshev
Abstract:We have studied the activation of silicon implanted in GaAs during a rapid thermal anneal with a protective layer and without it. It is found that during the anneal there is a diffusion redistribution of the silicon. The use of a dielectric coating during the anneal leads to a reduction both in the diffusion coefficient and also in the amount of electrical activation of the impurity. Tomsk Polytechnical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 44–48, November, 1998.
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