Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers |
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| Authors: | R Dai W Zhuang K Bohnert C Klingshirn |
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| Institution: | (1) Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart, Federal Republic of Germany;(2) Physikalisches Institut der Universität, Praffenwaldring 57, D-7000 Stuttgart, Federal Republic of Germany;(3) Institut für Angewandte Physik der Universität, Kaiserstrasse 12, D-7500 Karlsruhe, Federal Republic of Germany;(4) Physikalisches Institut der Universität, Robert-Mayer-Strasse 2-4, D-6000 Frankfurt/Main, Federal Republic of Germany;(5) Present address: Changchun Institute of Physics, Academy of Sciences, Changchun, The Peoples Republic of China;(6) Present address: Institut of Semiconductors, Academy of Sciences, Beijing, The Peoples Republic of China |
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| Abstract: | The spectra of photoluminescence and optical gain of GaN have been measured at low temperatures under N2-laser excitation.At low excitation levels (I
exc 104W cm–2) we observe free and bound exciton recombination. At intermediate excitation (I
exc 105W cm–2), inelastic exciton-exciton scattering processes show up. At the highest excitation levels (I
exc 106 W cm–2) we report here for the first time the emission from an electron-hole plasma. |
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