Theory of cyclotron resonance width for electrons inelastically scattered by phonons

The cyclotron resonance width for a semiconductor under extreme high fields is calculated with the assumptions that electrons are scattered by acoustic phonons inelastically. The numerical results are in very good agreement with the recent experiments on Ge by Miura et al. (T ～ 300 K, B ～ 97 tesla). The energy-dependent widths arising from the relaxation processes with absorption and emission of a phonon show quite distinctive behaviors at low electron energies. At extreme low temperatures when few phonons are present, the width arising from the zero-point motion of the lattice is finite but very small. The charged-impurity scattering with the density as low as 10¹² cm^?3 numerically dominate the width due to the electron-phonon interaction below 10 K. The present theory supplements the previous work by Suzuki et al. where the elastic-scattering and high-temperature approximation were used.